Mixed-Signal IC (MSIC) for New SOI-Based Structure

Takeshi MATSUTANI  Toshiharu TAKARAMOTO  Takao MIURA  Syuichi HARAJIRI  Tsunenori YAMAUCHI  

IEICE TRANSACTIONS on Electronics   Vol.E75-C    No.12    pp.1515-1521
Publication Date: 1992/12/25
Online ISSN: 
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Special Issue on SOI (Si on Insulator) Devices)
Category: SOI LSIs
MSIC,  SOI,  rectifier,  delta-sigma A/D converter,  

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We fabricated mixed-signal ICs (MSICs) using wafer-bonded SOI devices with a film several microns thick. We found the MOSFETs on wafer-bonded SOI had characteristics as good as those on a conventional wafer provided the active Si layer is more than 2 µm thick. We fabricated a 16-bit SOI-CMOS delta-sigma A/D converter that suppressed digital noise interference via the substrate. We also fabricated a rectifier-merged SOI-BiCMOS circuit. The resulting characteristics were good, and not possible using conventional junction isolation. Our results suggest that SOI-based isolation is a key technology in integrating devices and systems on a single chip.