Analytical Modeling of Dynamic Performance of Deep Sub-micron SOI/SIMOX Based on Current-Delay Product

Makoto IKEDA
Kunihiro ASADA
Yasuhisa OMURA
Katsutoshi IZUMI

IEICE TRANSACTIONS on Electronics   Vol.E75-C    No.12    pp.1506-1514
Publication Date: 1992/12/25
Online ISSN: 
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Special Issue on SOI (Si on Insulator) Devices)
Category: Deep Sub-micron SOI CMOS
CMOS,  SOI,  deep-submicron,  modeling,  ring oscillator,  

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Dynamic performance of ultra-thin SIMOX (Separation by IMplanted OXgen) CMOS circuits has been studied using ring oscillators. A novel concept of current-delay product, along with an equivalent linear resistance of MOSFETs, is applied for deriving effective load capacitance of near 0.1 µm gate CMOS circuits. Calculation results showed quatitative agreement with measurement data. It was found that the gate-fringing capacitance limits the delay time is the case of under 0.2 µm gate-length. The lower bound of power-delay product of SIMOX/SOI is expected as low as 0.2 fJ for the gate length of 0.15 µm at the supply voltage of 1.5 V.