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Investigation on High-Speed Performance of 0.1-µm-Gate, Ultrathin-Film CMOS/SIMOX
Yasuhisa OMURA Sadao NAKASHIMA Katsutoshi IZUMI
IEICE TRANSACTIONS on Electronics
Publication Date: 1992/12/25
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Special Issue on SOI (Si on Insulator) Devices)
Category: Deep Sub-micron SOI CMOS
CMOS, SOI, SIMOX, ultrathin, high speed,
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A 0.1-µm-gate CMOS/SIMOX has been successfully fabricated using high quality SIMOX substrates. The propagation delay time for the 0.1-µm-gate CMOS/SIMOX is not so noticeable due to the parasitic resistance of the source and drain regions. We anticipate 0.1-µm-gate CMOS/SIMOX devices with a delay time of less than 20 ps at a supply voltage of 1.5 V by reducing the remaining parasitic resistance and capacitances.