Investigation on High-Speed Performance of 0.1-µm-Gate, Ultrathin-Film CMOS/SIMOX

Yasuhisa OMURA  Sadao NAKASHIMA  Katsutoshi IZUMI  

Publication
IEICE TRANSACTIONS on Electronics   Vol.E75-C   No.12   pp.1491-1497
Publication Date: 1992/12/25
Online ISSN: 
DOI: 
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Special Issue on SOI (Si on Insulator) Devices)
Category: Deep Sub-micron SOI CMOS
Keyword: 
CMOS,  SOI,  SIMOX,  ultrathin,  high speed,  

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Summary: 
A 0.1-µm-gate CMOS/SIMOX has been successfully fabricated using high quality SIMOX substrates. The propagation delay time for the 0.1-µm-gate CMOS/SIMOX is not so noticeable due to the parasitic resistance of the source and drain regions. We anticipate 0.1-µm-gate CMOS/SIMOX devices with a delay time of less than 20 ps at a supply voltage of 1.5 V by reducing the remaining parasitic resistance and capacitances.