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Effects of Hot Electron Trapping in Ultra-Thin-Film SOI/SIMOX pMOSFET's
Kazuo SUKEGAWA Seiichiro KAWAMURA
IEICE TRANSACTIONS on Electronics
Publication Date: 1992/12/25
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Special Issue on SOI (Si on Insulator) Devices)
Category: Hot Carrier
SIMOX, MOSFET, hot carrier effect, electron trapping,
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Hot carrier stressing is carried out on ultra-thin-film SOI/pMOSFET's under a front gate operation. Degradations of both front and back gate characteristics are estimated. Effects of trapped electron in the front and the back gate oxide on device characteristics are also estimated. In a triode region, it is found that degradation in front gate characteristics is correlated with that in back gate characteristics, although ΔVth(b) is twenty times as large as ΔVth(f), due to difference between the front gate and the buried oxide thickness. In a pentode region, Δβ/β0 in a forward-mode is larger than that in a reverse-mode. This is because of the non-uniformly distributed hot carrier damage along the channel. Based on the charge-coupling theory, damages in the front gate and buried oxide by hot carrier effects are estimated separately. Flat-band-voltage shift in the back gate due to trapped charges in the buried oxide, is obtained from Vth (f) dependence on back gate bias. For Leff=2.0 µm devices, the flat-band-voltage shift varies in the range of 1.00 to 1.50 V. This indicates that trapped electrons are created in the buried oxide. Trapped electrons in the buried oxide increase gm(f) through the effect equivalent to back gate bias. From gm(f) dependence on back gate bias, it is found that effective channel length is decreased by trapped electrons in the front gate oxide near the drain. Therefore, it is worth noticing that, in hot carrier effects in ultra-thin-film SOI/pMOSFET's, gm is increased not only by the reduction of effective channel length but also by the equivalent back gate bias effect.