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Hot-Carrier Reliability in Submicrometer Ultra-Thin SOI-MOSFET's
Yasuo YAMAGUCHI Masahiro SHIMIZU Yasuo INOUE Tadashi NISHIMURA Katsuhiro TSUKAMOTO
IEICE TRANSACTIONS on Electronics
Publication Date: 1992/12/25
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Special Issue on SOI (Si on Insulator) Devices)
Category: Hot Carrier
thin SOI, hot-carrier, SIMOX, gate-overlapped LDD,
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Hot-carrier characteristics in ultra-thin SOI MOSFET's (T-SOI MOSFET's) with gate-overlapped LDD have been investigated. The change in transistor static characteristics after hot carrier stress was mainly observed as positive threshold voltage (Vt) shifts due to trapped electrons, while in bulk-Si MOSFET's drain current degradation was dominant. The hot-carrier life time in T-SOI MOSFET's was comparable to that in bulk-Si devices at low drain voltage, but the life time dependence on drain voltage was different from that in bulk-Si MOSFET's, and the Vt degraded rapidly at the condition that parasitic bipolar breakdown began to occur. This implies that the drain supply voltage in T-SOI MOSFET's is determined directly by parasitic bipolar breakdown voltage unlike bulk-Si MOSFET's in which it is determined by hot-carrier reliability. The gate-overlapped LDD structure was compared with single drain structure and proved to provide better hot-carrier endurance by the improvement of the parasitic bipolar breakdown voltage. The hot-carrier reliability in the back channels of T-SOI MOSFET's was also investigated, and it was found that the back channel tends to be degraded more easily than front channel with large positive Vt shifts. These results suggest that the front Vt shifts in T-SOI devices are related with electron injection into the back surface of the T-SOI layer through charge coupling at the condition that the parasitic bipolar breakdown occurs.