For Full-Text PDF, please login, if you are a member of IEICE,|
or go to Pay Per View on menu list, if you are a nonmember of IEICE.
A 4 GHz Thin-Base Lateral Bipolar Transistor Fabricated on Bonded SOI
Naoshi HIGAKI Tetsu FUKANO Atsushi FUKURODA Toshihiro SUGII Yoshihiro ARIMOTO Takashi ITO
IEICE TRANSACTIONS on Electronics
Publication Date: 1992/12/25
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Special Issue on SOI (Si on Insulator) Devices)
Category: SOI Devices
bonded SOI, lateral bipolar, sidewall self-aligning base, BiCMOS, recrystallization,
Full Text: PDF(652.4KB)>>
We fabricated a 4 GHz thin-base (120 nm) lateral bipolar transistor on bonded SOI by applying our sidewall self-aligning base process. By applying this device to BiCMOS circuits, bipolar transistor base junction capacitance, and MOSFET source and drain capacitance were very small. Furthermore, MOSFET and bipolar transistors are completely isolated from each other. Thus, it is easy to optimize MOS and bipolar processes, and provide protection from latch-up problems and soft errors caused by α-particles. In this paper, we describe device characteristics and discuss the crystal quality degradation introduced by ion implantation, and two dimensional effects of base diffusion capacitance.