Characterization of the Laser-Recrystallized Single-Crystalline Si-SiO2 Interface

Nobuo SASAKI  

IEICE TRANSACTIONS on Electronics   Vol.E75-C   No.12   pp.1430-1437
Publication Date: 1992/12/25
Online ISSN: 
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Special Issue on SOI (Si on Insulator) Devices)
Category: SOI Wafers
laser-recrystallization,  SOI,  interface-charge,  

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The interface between laser-recrystallized Si and SiO2 is investigated by means of capacitance-voltage curve measurements. The recrystallization is performed by scanning cw Ar+ laser. The change in the C-V curves shows that the laser-recrystallization generates positive charge and the fast interface states at the Si-SiO2 interface, and creates n-type defects in recrystallized bulk silicon. Nominal interface charge increases linearly with a laser power. The increase in the charge is enhanced by fast laser-beam scanning velocity. The change in the C-V curve is suppressed, if a substrate is heated up to 450 during recrystallization. Complete recovery of the induced change in the C-V curves requires a subsequent furnace annealing at a temperature as high as 1100. These phenomena are explained by the generation of oxygen vacancy at the Si-SiO2 interface and quenched-in point defects in the recrystallized Si. The oxygen vacancy is produced by a reaction between the melted Si and SiO2. The quenched-in defects are produced during fast cooling of the melted Si.