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Three-Dimensional Dynamics of Heavy-Ion Induced CMOS Latchup
Hideyuki IWATA Mitsuo YASUHIRA Shinji ODANAKA Takashi OHZONE
IEICE TRANSACTIONS on Electronics
Publication Date: 1992/10/25
Print ISSN: 0916-8516
Type of Manuscript: PAPER
Category: Semiconductor Materials and Devices
heavy-ion, CMOS, latchup, simulation,
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This paper presents the dynamics of heavy-ion induced latchup turn-on behavior in CMOS structures using a three-dimensional and transient device simulation. The three-dimensional effects of parasitic devices in a CMOS structure during latchup turn-on are discussed in detail when a heavy-ion strikes the CMOS structure. For different incident types, the dynamics of latchup turn-on behaviors are also simulated. Moreover, latchup immunities of the CMOS structure obtained by two- and three-dimensional calculations are compared for the different incident types. This result suggests that the rough relation between latchup immunity and heavy-ion incident energy can be estimated using a two-dimensional simulation.