Three-Dimensional Dynamics of Heavy-Ion Induced CMOS Latchup

Hideyuki IWATA  Mitsuo YASUHIRA  Shinji ODANAKA  Takashi OHZONE  

IEICE TRANSACTIONS on Electronics   Vol.E75-C   No.10   pp.1281-1290
Publication Date: 1992/10/25
Online ISSN: 
Print ISSN: 0916-8516
Type of Manuscript: PAPER
Category: Semiconductor Materials and Devices
heavy-ion,  CMOS,  latchup,  simulation,  

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This paper presents the dynamics of heavy-ion induced latchup turn-on behavior in CMOS structures using a three-dimensional and transient device simulation. The three-dimensional effects of parasitic devices in a CMOS structure during latchup turn-on are discussed in detail when a heavy-ion strikes the CMOS structure. For different incident types, the dynamics of latchup turn-on behaviors are also simulated. Moreover, latchup immunities of the CMOS structure obtained by two- and three-dimensional calculations are compared for the different incident types. This result suggests that the rough relation between latchup immunity and heavy-ion incident energy can be estimated using a two-dimensional simulation.