Isolation Characteristics in GaAs ICs on Semi-Insulating Substrate

Kazuyuki INOKUCHI  Yuko SEKINO-ITOH  Yoshiaki SANO  

Publication
IEICE TRANSACTIONS on Electronics   Vol.E75-C   No.10   pp.1154-1164
Publication Date: 1992/10/25
Online ISSN: 
DOI: 
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Special Issue on Compound Semiconductor Integrated Circuits)
Category: 
Keyword: 
isolation,  leak,  sidegate,  M-i-n,  LSI,  

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Summary: 
Isolation characteristics, which are important factors in designing GaAs ICs, are investigated focusing on leak current between circuit elements on a semi-insulating substrate and on the sidegating effect that results from leak current between MESFETs. We have found that the large leak current comes from the projecting edge, located outside the channel, of the gate electrode and that this leak current is the main cause of the sidegating effect. By taking into account quantitatively evaluated isolation characteristics, we can improve LSI design rules to reproducible and reliable operation.