A 1-K ECL Gate Array Implemented with Fully Self-Aligned AlGaAs/GaAs Heterojunction Bipolar Transistors

Nobuyuki HAYAMA  Yuzuru TOMONOH  Hideki TAKAHASHI  Kazuhiko HONJO  

Publication
IEICE TRANSACTIONS on Electronics   Vol.E75-C   No.10   pp.1121-1126
Publication Date: 1992/10/25
Online ISSN: 
DOI: 
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Special Issue on Compound Semiconductor Integrated Circuits)
Category: 
Keyword: 
HBT,  gate array,  ring oscillator,  propagation delay time,  

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Summary: 
The paper describes the design considerations, fabrication process and performance of the newly developed 1-K ECL gate array implemented with fully self-aligned AlGaAs/GaAs hoterojunction bipolar transistors (HBTs). This gate array consists of 960 three-input OR/NOR ECL basic gates. It contains about 7,600 transistors in a chip area 8.15-mm8.45-mm. The basic (FI=FO=1, wiring length L=0-mm) and loaded (FI=FO=3, L=1-mm) gates exhibit delay times of 33-ps and 82-ps, respectively, with 8.5-mW/gate power dissipation. From the measured values, fan-in, fan-out and wiring delay times of 9-ps/FI, 7-ps/FO and 17-ps/mm are estimated, respectively. These results are in good agreement with the designed results obtained using "SPICE" simulation.