Optical Receiver and Laser Driver Circuits Implemented with 0.35 µm GaAs JFETs

Chiaki TAKANO  Kiyoshi TANAKA  Akihiko OKUBORA  Jiro KASAHARA  

IEICE TRANSACTIONS on Electronics   Vol.E75-C   No.10   pp.1110-1114
Publication Date: 1992/10/25
Online ISSN: 
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Special Issue on Compound Semiconductor Integrated Circuits)
optical receiver,  laser driver,  JFET,  MSM photodetector,  

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We have successfully developed an optical receiver and a laser driver circuit which were implemented with 0.35 µm GaAs JFETs (junction Field Effect Transistors). The 0.35 µm GaAs. JFET had the typical transconductance of 480 mS/mm with small drain conductance. An interdigit MSM (Metal Semiconductor Metal) -type photodetector and the JFETs were monolithically integrated on a GaAs substrate for the optical receiver. The fabricated optical receiver demonstrated Gb/s operation with a very low power consumption of 8.2 mW. The laser driver circuit operated at up to 4.0 Gb/s.