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A 34.8 GHz 1/4 Static Frequency Divider Using AlGaAs/GaAs HBTs
Yoshiki YAMAUCHI Osaake NAKAJIMA Koichi NAGATA Hiroshi ITO Tadao ISHIBASHI
IEICE TRANSACTIONS on Electronics
Publication Date: 1992/10/25
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Special Issue on Compound Semiconductor Integrated Circuits)
HBT, GaAsIC, AlGaAs/GaAs, frequency divider,
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A one-by-four static frequency divider using AlGaAs/GaAs heterojunction bipolar transistors (HBTs) was designed to operate at a bias condition that gave a maximum cutoff frequency fT and a maximum oscillation freqency fmax. The fT and fmax applied to the divider were 68 GHz and 56 GHz, respectively. As a result of the tests, the circuit operated up to 34.8 GHz at a power supply voltage of 9 V and power dissipation of 495 mW. A low minimum input signal power level of 0 dBm was also achieved.