Room-Temperature CW Operation of AlGaAs/GaAs SQW Lasers Grown on Si by MOCVD

Takashi EGAWA  Takashi JIMBO  Masayoshi UMENO  

Publication
IEICE TRANSACTIONS on Fundamentals of Electronics, Communications and Computer Sciences   Vol.E75-A   No.1   pp.60-66
Publication Date: 1992/01/25
Online ISSN: 
DOI: 
Print ISSN: 0916-8508
Type of Manuscript: Special Section PAPER (Joint Special Section on Fundamentals of Next Generation Opto-Technologies)
Category: 
Keyword: 
GaAs/Si,  CW operation,  MOCVD,  SQW laser,  

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Summary: 
The heterointerfaces of Al0.3Ga0.7As/GaAs single quantum wells (SQWs) and the characteristics of SQW lasers grown on Si substrates with Al0.5Ga0.5As/Al0.55Ga0.45P intermediate layers (AlGaAs/AlGaP ILs) entirely by metalorganic chemical vapor deposition (MOCVD) are reported. The effects of thermal cycle annealing on the crystallinity and the lasing characteristics of GaAs/Si are also reported. By using the AlGaAs/AlGaP ILs, SQWs with a specular surface morphology and a smoother heterointerface can be grown on a Si substrate. Thermal cycle annealing is found to improve the crystallinity of GaAs/Si and to contribute to room-temperature continuous-wave operation of lasers on Si substrates. The combinations of the techniques of AlGaAs/AlGaP ILs and thermal cycle annealing improve the lasing characteristics: an average threshold current density of 1.83 kA/cm2, an average differential quantum efficiency of 52%, an internal quantum efficiency of 83%, an intrinsic mode loss coefficient of 23cm-1, a differential gain coefficient of 1.9cm/A, and a transparency current density of 266 A/cm2, which are superior to those of the two-step-grown laser on a Si substrate. The improvements of the lasing characteristics result from the smooth heterointerfaces of the AlGaAs/AlGaP ILs.