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Low Dimensional Quantum Effects in Semiconductor Lasers
IEICE TRANSACTIONS on Fundamentals of Electronics, Communications and Computer Sciences
Publication Date: 1992/01/25
Print ISSN: 0916-8508
Type of Manuscript: INVITED PAPER (Joint Special Section on Fundamentals of Next Generation Opto-Technologies)
quantum wire, quantum box, microcavity,
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Several issues on semiconductor lasers with low dimensional quantum systems are discussed. First, described are fabrication techniques for quantum wire and box structures, particularly a selective growth MOCVD growth technique which have been recently developed. Using this technique, we obtained 20 nm 15 nm triangular-shaped quantum wire structures. Next, we investigate band structures of the quantum wires having strain effects, including lasing characteristics of quantum wire lasers with the strain effects. Finally we discuss importance to control both the electron wave mode and the optical wave mode for future high performance lasers, which leads to the concept of quantum micro-lasers. In order to demonstrate possibility to control the spontaneous mode in the laser cavity, an experimental result is shown on enhancement and inhibition effects of the spontaneous emission mode in a vertical cavity laser having two kinds of the quantum well.