A Three-Dimensional Simulation for the Dynamic Behavior of a Trench Capacitor dRAM Cell

Kaori MORIYAMA  Shinji ODANAKA  Youhei ICHIKAWA  

Publication
IEICE TRANSACTIONS on Electronics   Vol.E74-C   No.6   pp.1615-1620
Publication Date: 1991/06/25
Online ISSN: 
DOI: 
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Special Issue on Device and Process Simulation for Ultra Large Scale Integration)
Category: 
Keyword: 


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Summary: 
This paper describes the dynamic behavior of a trench capacitor dRAM cell, named the SCC (Surrounded high-Capacitor Cell). A transient three-dimensional simulation reveals the raising of the substrate potential and the leakage current in the low-to-high state operation. The simulation results are verified by the experimental data using a test device. The characterization of this phenomenon allows design consideration of the scaled SCC.