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Microwave Characteristic and Application of Au/WSiN GaAs-MESFETs with Neutral Buried p-Layers
Kiyomitsu ONODERA Yuhki IMAI Kazuyoshi ASAI
IEICE TRANSACTIONS on Electronics
Publication Date: 1991/05/25
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Special Issue on the 3rd Asia-Pacific Microwave Conference)
Category: Active Devices and Circuits
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LDD-structure GaAs-MESFETs with WSiN bilayer gate are fabricated adopting neutral buried p-layers formed by 50-keV Be-implantation. fT of 108 GHz and fmax of over 130 GHz are obtained on 0.2-µm gate length. A direct-coupled amplifier IC with bandwidth of 10 GHz are fabricated using 0.4 µm GaAs-MESFETs and achieves a high gain of 20 dB with a minimum NF of 3.2 dB with a power consumption of 365 mW. Moreover, a bandwidth of 20 GHz is predicted for the amplifier IC using 0.2-µm GaAs-MESFETs.