Reviews and Prospects of SRAM Technology

Masahide TAKADA
Tadayoshi ENOMOTO

IEICE TRANSACTIONS on Electronics   Vol.E74-C    No.4    pp.827-838
Publication Date: 1991/04/25
Online ISSN: 
Print ISSN: 0916-8516
Type of Manuscript: Special Section INVITED PAPER (Special Issue on LSI Memories)
Category: SRAM

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This paper reviews the progresses of static random access memories (SRAMs) for the last past 10 years and shows how much memory cell sizes have been reduced and how the chip sizes have increased to increase memory capacities. After a basic SRAM chip organization is briefly described for readers' convenience, various latest and important key technologies for CMOS, bipolar transistor and BiCMOS SRAMs are reviewed. Chip organizations and circuit technologies to improve performance, which have been used in recently reported high performance SRAMs, are also introduced. Future large scale and high speed SRAMs are also forecasted.