Gunn Domain Dynamics in Power GaAs MESFETs

Masaaki KUZUHARA  Tomohiro ITOH  

IEICE TRANSACTIONS on Electronics   Vol.E74-C   No.12   pp.4147-4151
Publication Date: 1991/12/25
Online ISSN: 
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Special Issue on Millimeter-Wave/Heterojunction Devices)

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This paper describes an ensemble Monte Carlo simulation of Gunn domain dynamics in submicron-gate power GaAs MESFETs with a recessed gate structure. The simulated results indicate that the increase in recess width toward the drain contact region results in suppression of Gunn oscillation. This is due to the increase in domain propagation velocity by the reduced maximum electric-field in the domain. The inclusion of surface n+ region between the gate and drain regions is also proved to be effective in suppressing Gunn oscillation. Based on the simulation results, we propose a useful criterion determining whether the domain becomes traveling or stationaly. The criterion suggests that the device design allowing increased domain velocity or increased (Ndd) product is desirable for the oscillation-free, stable operation of power GaAs MESFETs.