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A 31 GHz Static Frequency Divider Using Au/WSiN Gate GaAs MESFETs
Masami TOKUMITSU Kiyomitsu ONODERA Hiroki SUTOH Kazuyoshi ASAI
IEICE TRANSACTIONS on Electronics
Publication Date: 1991/12/25
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Special Issue on Millimeter-Wave/Heterojunction Devices)
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A divide-four static frequency divider is fabricated to evaluate the ultra-high-speed performance of Au/WSiN gate GaAs MESFETs. The divider consists of two T-type flip-flops (T-F/F) ans three buffers based on low-power source-coupled FET logic (LSCFL). The divider operates up to 31.4 GHz at room temperature at power dissipation of 150 mW per T-F/F using Au/WSiN gate GaAs MESFETs well scaled down to 0.3 µm gate-length.