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BP-LDD n+ Self-Aligned GaAs-MESFET with Au/WSiN Gate and Its Application to 0.5-30 GHz Distributed Amplifier
Kiyomitsu ONODERA Masami TOKUMITSU Noboru TAKACHIO Hiroyuki KIKUCHI Kazuyoshi ASAI
IEICE TRANSACTIONS on Electronics
Publication Date: 1991/12/25
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Special Issue on Millimeter-Wave/Heterojunction Devices)
Full Text: PDF(516KB)>>
BP-LDD n+ self-aligned GaAs-MESFETs with Au/WSiN bilayer gate have been fabricated on 3-indiameter GaAs substrate which demonstrates the splendid potentiality of GaAs-MESFET technology. The 0.3-µm gate GaAs-MESFETs show a peak extrinsic transconductance of 550 mS/mm with a threshold voltage of -1.4 V. From S-parameter measurement, the MESFETs demonstrate a peak cutoff frequency of 56 GHz and a maximum oscillation frequency of 120 GHz. Moreover, a monolithic distributed amplifier has been fabricated using the four GaAs-MESFETs with 0.3 µm gate length. The amplifier has achieved a high gain of 7.3 dB with a 3-dB down frequency bandwidth of 0.5-30 GHz.