DC and Microwave Performances of (InAs)(GaAs) Short Period Superlattice Channel 2DEGFET's

Kazuhiko ONDA  Hideo TOYOSHIMA  Masaaki KUZUHARA  Norihiko SAMOTO  Emiko MIZUKI  Yoichi MAKINO  Tomohiro ITOH  

IEICE TRANSACTIONS on Electronics   Vol.E74-C   No.12   pp.4114-4118
Publication Date: 1991/12/25
Online ISSN: 
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Special Issue on Millimeter-Wave/Heterojunction Devices)

Full Text: PDF(747.9KB)>>
Buy this Article

The (InAs)1(GaAs)n short period superlattice (SPS) channel 2DEGFET's with 0.2 µm T-Shaped gates have been successfully fabricated on a GaAs substrate for the first time, and DC and RF performances of the superlattice channel devices have been investigated. Compared to conventional InGaAs alloy channel devices, excellent results in both DC and RF characteristics have been obtained for the SPS channel devices. The dependence of the layer index n for (InAs)1(GaAs)n on device performances has been also investigated. The (InAs)1(GaAs)4 channel samples have shown higher cut-off frequencies as well as superior noise performances compared to those for the (InAs)1(GaAs)5 channel samples. The best noise figure of 0.55 dB with an associated gain of 11.26 dB has been obtained at 12 GHz. The superior performances obtained are due to the improved electron transport properties of (InAs)1(GaAs)n SPS compared to those of InGaAs alloy. These results indicate a great potential of SPS channel structures for high frequency low noise device applications.