Permissible Optical Input Power in a Semiconductor Optical Switch/Modulator Using Electric Field Effect

Kazuhiko SHIMOMURA  Masahiro ASADA  Shigehisa ARAI  

IEICE TRANSACTIONS (1976-1990)   Vol.E73   No.4   pp.491-493
Publication Date: 1990/04/25
Online ISSN: 
Print ISSN: 0000-0000
Type of Manuscript: Special Section LETTER (Special Issue on 1990 Spring National Convention IEICE)
Category: Optoelectronics and Quantum Electronics

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The permissible optical input power of a semiconductor optical switch/modulator for maintaining high performances was derived by taking account of reduction of internal electric field due to absorption-induced photo-current. It was found that the extinction ratio degrades with the increase of absorbed optical power. The permissible optical input power, at which the extinction ratio decreases 3 dB, was found to be higher than 20 mW for reflection type optical switch/modulator.