GaInAsP/InP MQW Intersectional Optical Switch/Modulator Using Field Induced Refractive Index Variation

K.G. RAVIKUMAR  Kazuhiko SHIMOMURA  Tomoyuki KIKUGAWA  Akira IZUMI  Katsuaki MATSUBARA  Shigehisa ARAI  Yasuharu SUEMATSU  

IEICE TRANSACTIONS (1976-1990)   Vol.E72   No.4   pp.384-392
Publication Date: 1989/04/25
Online ISSN: 
Print ISSN: 0000-0000
Type of Manuscript: PAPER
Category: Quantum Electronics

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An intersectional optical switch structure based on the field induced refractive index variation was fabricated by the use of LPE grown GaInAsP/InP MQW wafer. The first switching operation in a MQW intersectional switch structure was achieved. The field induced refractive index variation in quantum well was estimated to be around 0.45% at the applied field of 13 V/µm from the experimentally obtained switching ratio. Finally a small X-type modulator with low chirp, low power saturation is proposed which make use of the reflection phenomenon caused by field induced rafractive index variation instead of absorption phenomenon as in conventional absorption type modulators.