Dual Gate GaAs MESFETs with Low Distortion Gain Control

Seiichi WATANABE  Shinichi TANAKA  Junichiro KOBAYASHI  Hajime OOKE  Hidemi TAKAKUWA  Osamu YONEYAMA  

IEICE TRANSACTIONS (1976-1990)   Vol.E72   No.4   pp.310-312
Publication Date: 1989/04/25
Online ISSN: 
Print ISSN: 0000-0000
Type of Manuscript: Special Section LETTER (Special Issue on 1989 Spring National Convention IEICE)
Category: Electronic Devices

Full Text: PDF>>
Buy this Article

Cross-modulation distortion of dual gate GaAs MESFETs in the gain controlled operation mode has been studied analytically and experimentally, yielding a conclusion that setting the ratio of the structural parameters (mβ21) and the pinch-off voltage large is effective for reducing the distortion.