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Dual Gate GaAs MESFETs with Low Distortion Gain Control
Seiichi WATANABE Shinichi TANAKA Junichiro KOBAYASHI Hajime OOKE Hidemi TAKAKUWA Osamu YONEYAMA
IEICE TRANSACTIONS (1976-1990)
Publication Date: 1989/04/25
Print ISSN: 0000-0000
Type of Manuscript: Special Section LETTER (Special Issue on 1989 Spring National Convention IEICE)
Category: Electronic Devices
Full Text: PDF>>
Cross-modulation distortion of dual gate GaAs MESFETs in the gain controlled operation mode has been studied analytically and experimentally, yielding a conclusion that setting the ratio of the structural parameters (mβ2/β1) and the pinch-off voltage large is effective for reducing the distortion.