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Field Induced Refractive Index Variation in Quantum Box Structure for Intersectional Optical Switch
Katsuaki MATSUBARA K.G. RAVIKUMAR Masahiro ASADA Yasuharu SUEMATSU
IEICE TRANSACTIONS (1976-1990)
Publication Date: 1989/11/25
Print ISSN: 0000-0000
Type of Manuscript: LETTER
Category: Quantum Electronics
Full Text: PDF(208.8KB)
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Field induced refractive index variation and the ratio of index to loss variations p' which is an important parameter deciding the loss characteristics of an intersectional optical switch, was analyzed for GaInAs/InP quantum box structure. We found that large index variation and large | p| value(10) with low fundamental absorption, which are required for low insertion loss switch(1 dB), can be attained. Further the usable wavelength range for low loss switching operation is shown to be around 8 nm.