Field Induced Refractive Index Variation in Quantum Box Structure for Intersectional Optical Switch

Katsuaki MATSUBARA  K.G. RAVIKUMAR  Masahiro ASADA  Yasuharu SUEMATSU  

Publication
IEICE TRANSACTIONS (1976-1990)   Vol.E72   No.11   pp.1179-1181
Publication Date: 1989/11/25
Online ISSN: 
Print ISSN: 0000-0000
Type of Manuscript: LETTER
Category: Quantum Electronics
Keyword: 


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Summary: 
Field induced refractive index variation and the ratio of index to loss variations p' which is an important parameter deciding the loss characteristics of an intersectional optical switch, was analyzed for GaInAs/InP quantum box structure. We found that large index variation and large | p| value(10) with low fundamental absorption, which are required for low insertion loss switch(1 dB), can be attained. Further the usable wavelength range for low loss switching operation is shown to be around 8 nm.