Transverse Mode Characteristics of 1.3µm GaInAsP/InP Buried Crescent Lasers by the Use of a Reactive Ion Beam Etching Process

Akihiko KASUKAWA  Masayuki IWASE  Narihito MATSUMOTO  Toshihiko MAKINO  Susumu KASHIWA  

IEICE TRANSACTIONS (1976-1990)   Vol.E71   No.9   pp.837-839
Publication Date: 1988/09/25
Online ISSN: 
Print ISSN: 0000-0000
Type of Manuscript: LETTER
Category: Quantum Electronics

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Transverse mode characteristics of a high power 1.3µm GaInAsP/InP buried crescent laser by the use of a dry etching process is described. With this technique, a single transverse mode (STM) yield as high as 95% was achieved. Transverse mode stability was confirmed after 1000 h aging at 50, 20 mW. A coupling efficiency into a single mode fiber as high as 63% was obtained.