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Computer Analysis on the Temperature Dependence of GaAs MESFET Characteristics
Mayumi HIROSE Kenji ISHIDA Nobuyuki TOYODA
IEICE TRANSACTIONS (1976-1990)
Publication Date: 1988/05/25
Print ISSN: 0000-0000
Type of Manuscript: LETTER
Category: Semiconductors; Materials and Devices
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GaAs MESFET characteristics in the temperature range of 300 K to 500 K have been investigated using a two-dimensional device simulator. The temperature dependence of the threshold voltage, K-value, subthreshold current, source-to-gate capacitance, and cutoff frequency is theoretically explained.