Optical Nanosecond Memory Utilizing the Mode-Hopping Phenomenon of Semiconductor Laser

Hirokazu NAKAYAMA  Wakao SASAKI  Tatehisa OHTA  

Publication
IEICE TRANSACTIONS (1976-1990)   Vol.E71   No.4   pp.337-339
Publication Date: 1988/04/25
Online ISSN: 
DOI: 
Print ISSN: 0000-0000
Type of Manuscript: Special Section LETTER (Special Issue: Papers from 1988 Spring Convention IEICE)
Category: Optoelectronics
Keyword: 


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Summary: 
This letter reports the 10 ns (100 MHz) optoelectronic memory utilizing the mode-hopping phenomenon of a semiconductor laser. The hysteresis (wavelength bistability) features hold even at the speed of nanosecond. Some influences of VHF current modulation on mode-hopping are also measured.