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Optical Nanosecond Memory Utilizing the Mode-Hopping Phenomenon of Semiconductor Laser
Hirokazu NAKAYAMA Wakao SASAKI Tatehisa OHTA
IEICE TRANSACTIONS (1976-1990)
Publication Date: 1988/04/25
Print ISSN: 0000-0000
Type of Manuscript: Special Section LETTER (Special Issue: Papers from 1988 Spring Convention IEICE)
Full Text: PDF>>
This letter reports the 10 ns (100 MHz) optoelectronic memory utilizing the mode-hopping phenomenon of a semiconductor laser. The hysteresis (wavelength bistability) features hold even at the speed of nanosecond. Some influences of VHF current modulation on mode-hopping are also measured.