Room Temperature CW Operation of GaAs Vertical Cavity Surface Emitting Laser

Fumio KOYAMA  Susumu KINOSHITA  Kenichi IGA  

IEICE TRANSACTIONS (1976-1990)   Vol.E71   No.11   pp.1089-1090
Publication Date: 1988/11/25
Online ISSN: 
Print ISSN: 0000-0000
Type of Manuscript: LETTER
Category: Quantum Electronics

Full Text: PDF>>
Buy this Article

This is the first report on room temperature CW operation of GaAlAs/GaAs vertical Fabry-Perot cavity surface emitting lasers. A vertical microcavity was formed with a diameter of 7 µm and cavity length of 5.5 µm by a two-step MOCVD growth and fully monolithic technology. The threshold current was 32 mA under CW condition at 22.5. Stable single transverse and longitudinal mode operation was obtained.