1.5-1.6 µm GaInAsP/InP Bundle-Integrated-Guide (BIG) Distributed-Bragg-Reflector (DBR) Lasers

Yuichi TOHMORI  Kazuhiro KOMORI  Shigehisa ARAI  Yasuharu SUEMATSU  

IEICE TRANSACTIONS (1976-1990)   Vol.E70   No.5   pp.494-503
Publication Date: 1987/05/25
Online ISSN: 
Print ISSN: 0000-0000
Type of Manuscript: PAPER
Category: Optical and Quantum Electronics

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Bundle-integrated-guide (BIG) structure distributed-Bragg-reflector (DBR) lasers based on 1.5-1.6 µm GaInAsP/InP system are presented. The significance of this structure is the suitability for the planar fabrication process of integrated optical devices, such as DBR lasers, which comprise active and passive waveguide regions. The BIG structure enables easier fabrication of buried hetero-structure (BH) of such an integrated waveguide device. High coupling efficiency between those waveguides of 95-99 percent is theoretically available with sufficiently large tolerance in thickness and composition of waveguide layers. Devices with different lengths of the active region, such as 200 µm, 100 µm and 50 µm, were fabricated and tested both for DC operation and rapid direct modulation. Threshold current as low as 28 mA and output power of 6.5 mW/facet were obtained for BH-BIG-DBR lasers with 100 µm long and 3 µm wide active region. Side-mode suppression ratio (SMSR) of more than 32 dB was obtained at the bias current of 1.2 times the threshold and it was not much degraded by rapid direct modulation.