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An X-Band 12 W GaAs Monolithic Transmit-Receive Switch
IEICE TRANSACTIONS (1976-1990)
Publication Date: 1987/04/25
Print ISSN: 0000-0000
Type of Manuscript: Special Section LETTER (Special Issue: Papers from 1987 National Convention IEICE)
Category: Electro Magnetic Theory and Microwave Circuits
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This letter describes a high power monolithic GaAs FET transmit-receive switch (TR switch) with two FETs. Both FETs operate in the same states, low impedance state in transmitting and high in receiving, so rf voltage imposed on FET is low both in transmitting and receiving. The developed TR switch can handle more than 12 W peak power at X-band frequencies.