An X-Band 12 W GaAs Monolithic Transmit-Receive Switch

Makoto MATSUNAGA
Yoshitada IYAMA
Kazuhiko NAKAHARA
Fumio TAKEDA

Publication
IEICE TRANSACTIONS (1976-1990)   Vol.E70    No.4    pp.259-260
Publication Date: 1987/04/25
Online ISSN: 
DOI: 
Print ISSN: 0000-0000
Type of Manuscript: Special Section LETTER (Special Issue: Papers from 1987 National Convention IEICE)
Category: Electro Magnetic Theory and Microwave Circuits
Keyword: 


Full Text: PDF>>
Buy this Article



Summary: 
This letter describes a high power monolithic GaAs FET transmit-receive switch (TR switch) with two FETs. Both FETs operate in the same states, low impedance state in transmitting and high in receiving, so rf voltage imposed on FET is low both in transmitting and receiving. The developed TR switch can handle more than 12 W peak power at X-band frequencies.