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An 11.3 GHz Frequency Divider Employing AlGaAs/GaAs MISFET's
Shuichi FUJITA Makoto HIRANO Koichi MAEZAWA Takashi MIZUTANI
IEICE TRANSACTIONS (1976-1990)
Publication Date: 1987/04/25
Print ISSN: 0000-0000
Type of Manuscript: Special Section LETTER (Special Issue: Papers from 1987 National Convention IEICE)
Category: Semiconductor Devices and Integrated Circuits
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A high-speed potential of an n+-Ge gate AlGaAs/GaAs MISFET has been confirmed by a ring oscillator and a frequency divider performances. The circuit was based on SCFL with 1.0 µm gate-length MISFET's. The delay time was 42.4 ps with a power dissipation of 8.9 mW/gate. A maximum toggle frequency of 11.3 GHz with a power dissipation of 219 mW per T-F/F has been achieved at room temperature.