An 11.3 GHz Frequency Divider Employing AlGaAs/GaAs MISFET's

Shuichi FUJITA  Makoto HIRANO  Koichi MAEZAWA  Takashi MIZUTANI  

IEICE TRANSACTIONS (1976-1990)   Vol.E70   No.4   pp.221-223
Publication Date: 1987/04/25
Online ISSN: 
Print ISSN: 0000-0000
Type of Manuscript: Special Section LETTER (Special Issue: Papers from 1987 National Convention IEICE)
Category: Semiconductor Devices and Integrated Circuits

Full Text: PDF>>
Buy this Article

A high-speed potential of an n+-Ge gate AlGaAs/GaAs MISFET has been confirmed by a ring oscillator and a frequency divider performances. The circuit was based on SCFL with 1.0 µm gate-length MISFET's. The delay time was 42.4 ps with a power dissipation of 8.9 mW/gate. A maximum toggle frequency of 11.3 GHz with a power dissipation of 219 mW per T-F/F has been achieved at room temperature.