Fabrication of GaInAsP/InP Heterostructure for 1.5 µm Lasers by OMVPE

Yasuyuki MIYAMOTO  Chiaki WATANABE  Masashi NAGASHIMA  Kazuhito FURUYA  Yasuharu SUEMATSU  

IEICE TRANSACTIONS (1976-1990)   Vol.E70   No.2   pp.121-129
Publication Date: 1987/02/25
Online ISSN: 
Print ISSN: 0000-0000
Type of Manuscript: PAPER
Category: Optical and Quantum Electronics

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Fabrication of GaInAsP/InP heterostructure lasers for 1.5 µm wavelength region by organometallic vapor phase epitaxy are discussed. Results of growth conditions, which were experimentally found important to obtain the low threshold current density (1 kA/cm2) comparable with LPE at 1.5 µm lasing oscillation are reported, such as gas switching at hetero-interfaces, maintenance of constant temperature over the growth of all layers, selection of carrier gas and doping conditions. Furthermore, OMVPE device techniques for buried heterostructure laser operating at CW condition are described. Fabrications and characterization of quantum well structure are also reported.