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MOSFET's in Polycrystalline Si Recrystallized with the Process of SSIC--Seed Selection through Ion Channeling--
Ichiro MIZUSHIMA Kiyoshi OHORI Kenichi ITOH Hiroshi KUWANO
IEICE TRANSACTIONS (1976-1990)
Publication Date: 1987/11/25
Print ISSN: 0000-0000
Type of Manuscript: Special Section LETTER (Special Issue: Papers from 1987 National Conference on Semicondutor Devices and Materials IEICE)
Category: Semiconductor Devices
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This letter demonstrates the optimization for large grain poly-Si formation by Si ion implantation and subsequent recrystallization. When SSIC (seed selection through ion channeling) occurs, the grains size becomes largest. A high quality poly-Si MOSFET was fabricated using SSIC process.