MOSFET's in Polycrystalline Si Recrystallized with the Process of SSIC--Seed Selection through Ion Channeling--

Ichiro MIZUSHIMA  Kiyoshi OHORI  Kenichi ITOH  Hiroshi KUWANO  

Publication
IEICE TRANSACTIONS (1976-1990)   Vol.E70   No.11   pp.1062-1064
Publication Date: 1987/11/25
Online ISSN: 
DOI: 
Print ISSN: 0000-0000
Type of Manuscript: Special Section LETTER (Special Issue: Papers from 1987 National Conference on Semicondutor Devices and Materials IEICE)
Category: Semiconductor Devices
Keyword: 


Full Text: PDF>>
Buy this Article




Summary: 
This letter demonstrates the optimization for large grain poly-Si formation by Si ion implantation and subsequent recrystallization. When SSIC (seed selection through ion channeling) occurs, the grains size becomes largest. A high quality poly-Si MOSFET was fabricated using SSIC process.