Mechanism of Bit Line Mode Soft Error for DRAM

Mikio ASAKURA  Yoshio MATSUDA  Katsuhiro TSUKAMOTO  Kazuyasu FUJISHIMA  Tsutomu YOSHIHARA  

Publication
IEICE TRANSACTIONS (1976-1990)   Vol.E70   No.11   pp.1060-1061
Publication Date: 1987/11/25
Online ISSN: 
DOI: 
Print ISSN: 0000-0000
Type of Manuscript: Special Section LETTER (Special Issue: Papers from 1987 National Conference on Semicondutor Devices and Materials IEICE)
Category: Semiconductor Devices
Keyword: 


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Summary: 
This letter reports a charge collection experiment of alpha-particle-induced carriers in the cell arrays of the 1 Mb DRAM. It is indicated that this experiment is effective to estimate the soft error rate of VLSI memories with various kinds of structures.