GaInAsP/InP Surface Emitting Laser with Flat Surface Circular Buried Heterostructure

Seiji UCHIYAMA  Kenichi IGA  

IEICE TRANSACTIONS (1976-1990)   Vol.E69   No.9   pp.923-924
Publication Date: 1986/09/25
Online ISSN: 
Print ISSN: 0000-0000
Type of Manuscript: LETTER
Category: Optical and Quantum Electronics

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In order to reduce the threshold current of GaInAsP/InP surface emitting (SE) laser, we introduce a flat surface circular buried heterostructure (FCBH), which has merits of both planar buried heterostructure (PBH) and buried heterostructure with a SiO2 mask (BH), into GaInAsP/InP SE laser. Its minimum threshold current was 20 mA at 77 K, which provide better result than previous PBH-SE lasers or BH-SE lasers grown with a SiO2 mask.