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Mass Transport Buried Heterostructure Laser Using p-InP Substrate
Sekartedjo KOENTJORO Katare Gopalrao RAVIKUMAR Kazuhiko SHIMOMURA Kazuhiro KOMORI Shigehisa ARAI Yasuharu SUEMATSU
IEICE TRANSACTIONS (1976-1990)
Publication Date: 1986/09/25
Print ISSN: 0000-0000
Type of Manuscript: LETTER
Category: Optical and Quantum Electronics
Full Text: PDF>>
Mass-transport and conventional buying techniques were combined to fabricate narrow active stripe lasers. Lowest threshold current of 9.6 mA was obtained under CW operation for the active layer width of 1µm in 1.5 µm wavelength region. The maximum light output power and differential quantum efficiency were 10.6 mW and 17 percent/facet, respectively. With this structure, complete single transverse mode operation was achieved both for Fabry-Perot (FP) type and bundle-integrated-guide distributed Bragg reflecter (BIB-DBR) type lasers.