Mass Transport Buried Heterostructure Laser Using p-InP Substrate

Sekartedjo KOENTJORO  Katare Gopalrao RAVIKUMAR  Kazuhiko SHIMOMURA  Kazuhiro KOMORI  Shigehisa ARAI  Yasuharu SUEMATSU  

IEICE TRANSACTIONS (1976-1990)   Vol.E69   No.9   pp.920-922
Publication Date: 1986/09/25
Online ISSN: 
Print ISSN: 0000-0000
Type of Manuscript: LETTER
Category: Optical and Quantum Electronics

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Mass-transport and conventional buying techniques were combined to fabricate narrow active stripe lasers. Lowest threshold current of 9.6 mA was obtained under CW operation for the active layer width of 1µm in 1.5 µm wavelength region. The maximum light output power and differential quantum efficiency were 10.6 mW and 17 percent/facet, respectively. With this structure, complete single transverse mode operation was achieved both for Fabry-Perot (FP) type and bundle-integrated-guide distributed Bragg reflecter (BIB-DBR) type lasers.