GaInAs/InP MOSFETs by Organometallic Vapor Phase Epitaxy and Water Oxidation Techniques

Chiaki WATANABE  Satoru KINOSHITA  Kazuhito FURUYA  Yasuyuki MIYAMOTO  

Publication
IEICE TRANSACTIONS (1976-1990)   Vol.E69   No.7   pp.779-781
Publication Date: 1986/07/25
Online ISSN: 
DOI: 
Print ISSN: 0000-0000
Type of Manuscript: LETTER
Category: Semiconductors
Keyword: 


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Summary: 
GaInAs/InP MOSFETs were fabricated by organometallic vapor phase epitaxy (OMVPE) for the first time to obtain an effective channel mobility of 900 cm2/Vs comparable to the best data by other growth techniques. For the MOS structure, a native oxide layer was formed by low-temperature (220) oxidation technique using water. Due to potentially high uniformity, OMVPE MOSFET technique could be very attractive in the optoelectronic integrated circuits(OEIC) for optical communication.