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GaInAs/InP MOSFETs by Organometallic Vapor Phase Epitaxy and Water Oxidation Techniques
Chiaki WATANABE Satoru KINOSHITA Kazuhito FURUYA Yasuyuki MIYAMOTO
IEICE TRANSACTIONS (1976-1990)
Publication Date: 1986/07/25
Print ISSN: 0000-0000
Type of Manuscript: LETTER
Full Text: PDF>>
GaInAs/InP MOSFETs were fabricated by organometallic vapor phase epitaxy (OMVPE) for the first time to obtain an effective channel mobility of 900 cm2/Vs comparable to the best data by other growth techniques. For the MOS structure, a native oxide layer was formed by low-temperature (220) oxidation technique using water. Due to potentially high uniformity, OMVPE MOSFET technique could be very attractive in the optoelectronic integrated circuits(OEIC) for optical communication.