GaInAs/InP MOSFETs by Organometallic Vapor Phase Epitaxy and Water Oxidation Techniques

Chiaki WATANABE  Satoru KINOSHITA  Kazuhito FURUYA  Yasuyuki MIYAMOTO  

IEICE TRANSACTIONS (1976-1990)   Vol.E69    No.7    pp.779-781
Publication Date: 1986/07/25
Online ISSN: 
Print ISSN: 0000-0000
Type of Manuscript: LETTER
Category: Semiconductors

Full Text: PDF>>
Buy this Article

GaInAs/InP MOSFETs were fabricated by organometallic vapor phase epitaxy (OMVPE) for the first time to obtain an effective channel mobility of 900 cm2/Vs comparable to the best data by other growth techniques. For the MOS structure, a native oxide layer was formed by low-temperature (220) oxidation technique using water. Due to potentially high uniformity, OMVPE MOSFET technique could be very attractive in the optoelectronic integrated circuits(OEIC) for optical communication.