A 20 GHz Band Monolithic Low Noise Amplifier Using GaAs ADVANCED SAINT-FET

Masahiro MURAGUCHI
Takatomo ENOKI
Kimiyoshi YAMASAKI
Kuniki OHWADA

Publication
IEICE TRANSACTIONS (1976-1990)   Vol.E69    No.4    pp.326-328
Publication Date: 1986/04/25
Online ISSN: 
DOI: 
Print ISSN: 0000-0000
Type of Manuscript: Special Section LETTER (Special Issue: Papers from 1986 National Convention IECE Japan)
Category: Microwave Circuits
Keyword: 


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Summary: 
A 20 GHz band monolithic low noise amplifier combining improved SAINT-FET technology and optimized circuit design has been developed. The amplifier has a measured noise figure of less than 3.5 dB with a minimum gain of 4.2 dB over the 18.5 GHz to 20 GHz range. The optimal noise figure is 2.9 dB with a gain of 5.5 dB at 19 GHz. Standard threshold-voltage deviation of the process monitor FRTs is only 70 mV over the entire area of the 2-inch wafer.