For Full-Text PDF, please login, if you are a member of IEICE,|
or go to Pay Per View on menu list, if you are a nonmember of IEICE.
High Speed GaAs 8 b ALU
Masayuki INO Tohru TAKADA Masao IDA Naoki KATO
IEICE TRANSACTIONS (1976-1990)
Publication Date: 1986/04/25
Print ISSN: 0000-0000
Type of Manuscript: Special Section LETTER (Special Issue: Papers from 1986 National Convention IECE Japan)
Category: Compound Semiconductor Devices
Full Text: PDF(253.3KB)>>
A high speed GaAs 8 b ALU has been developed for application to video data processing. The ALU was designed using LSCFL and fabricated with 0.5µm BP-SAINT FETs. Very high speed operation of 1.2 ns critical path delay time corresponding to 84 ps/gate was obtained.