High Speed GaAs 8 b ALU

Masayuki INO  Tohru TAKADA  Masao IDA  Naoki KATO  

IEICE TRANSACTIONS (1976-1990)   Vol.E69    No.4    pp.302-304
Publication Date: 1986/04/25
Online ISSN: 
Print ISSN: 0000-0000
Type of Manuscript: Special Section LETTER (Special Issue: Papers from 1986 National Convention IECE Japan)
Category: Compound Semiconductor Devices

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A high speed GaAs 8 b ALU has been developed for application to video data processing. The ALU was designed using LSCFL and fabricated with 0.5µm BP-SAINT FETs. Very high speed operation of 1.2 ns critical path delay time corresponding to 84 ps/gate was obtained.