Three-Dimensional Simulation of Hot Carrier Effects in Submicron MOSFETs

Naoyuki SHIGYO  Shinji ONGA  Makoto YOSHIMI  Kenji TANIGUCHI  

IEICE TRANSACTIONS (1976-1990)   Vol.E69   No.4   pp.248-250
Publication Date: 1986/04/25
Online ISSN: 
Print ISSN: 0000-0000
Type of Manuscript: Special Section LETTER (Special Issue: Papers from 1986 National Convention IECE Japan)
Category: Silicon Devices and Integrated Circuits

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Hot carrier effects in narrow-channel MOSETs are investigated. With decreasing channel width below 1µm, the ratio of substrate to channel currents show marked increase. By using the newly developed full three-dimensional process/device simulation system, two significant causes of the hot carrier effects are clarified.