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Estimations of Emitter Crowding Effect and Emitter Gummel Number of Amorphous SiC: H Emitter HBT
Kimihiro SASAKI Masatoshi MORIKAWA Seijiro FURUKAWA
IEICE TRANSACTIONS (1976-1990)
Publication Date: 1986/04/25
Print ISSN: 0000-0000
Type of Manuscript: Special Section LETTER (Special Issue: Papers from 1986 National Convention IECE Japan)
Category: Silicon Devices and Integrated Circuits
Full Text: PDF(142.1KB)>>
Emitter crowding effect and emitter Gummel number of amorphous SiC: H emitter HBT have been investigated. Collector current density has been remarkably enhanced by narrowing the emitter stripe width. The emitter Gummel number has been estimated as high as 21014s/cm4.