Estimations of Emitter Crowding Effect and Emitter Gummel Number of Amorphous SiC: H Emitter HBT

Kimihiro SASAKI  Masatoshi MORIKAWA  Seijiro FURUKAWA  

IEICE TRANSACTIONS (1976-1990)   Vol.E69    No.4    pp.241-242
Publication Date: 1986/04/25
Online ISSN: 
Print ISSN: 0000-0000
Type of Manuscript: Special Section LETTER (Special Issue: Papers from 1986 National Convention IECE Japan)
Category: Silicon Devices and Integrated Circuits

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Emitter crowding effect and emitter Gummel number of amorphous SiC: H emitter HBT have been investigated. Collector current density has been remarkably enhanced by narrowing the emitter stripe width. The emitter Gummel number has been estimated as high as 21014s/cm4.