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1.55m GaInAsP/InP Buried Heterostructure Lasers with Multiple p-n Current Blocking Layer Entirely Grown by Low-Pressure OMVPE
Masashi NAGASHIMA Yasuyuki MIYAMOTO Chiaki WATANABE Yasuharu SUEMATSU Kazuhito FURUYA
IEICE TRANSACTIONS (1976-1990)
Publication Date: 1986/02/25
Print ISSN: 0000-0000
Type of Manuscript: LETTER
Category: Optical and Quantum Electronics
Full Text: PDF>>
1.55µm GaInAsP/InP BH lasers with multiple p-n current blocking layer were fabricated entirely by low-pressure OMVPE. The undercut portions were filled in a manner similar to mass transport process. The laser shows a threshold current of 48 mA at 300 K under CW operation.