1.55m GaInAsP/InP Buried Heterostructure Lasers with Multiple p-n Current Blocking Layer Entirely Grown by Low-Pressure OMVPE

Masashi NAGASHIMA  Yasuyuki MIYAMOTO  Chiaki WATANABE  Yasuharu SUEMATSU  Kazuhito FURUYA  

IEICE TRANSACTIONS (1976-1990)   Vol.E69    No.2    pp.92-94
Publication Date: 1986/02/25
Online ISSN: 
Print ISSN: 0000-0000
Type of Manuscript: LETTER
Category: Optical and Quantum Electronics

Full Text: PDF>>
Buy this Article

1.55µm GaInAsP/InP BH lasers with multiple p-n current blocking layer were fabricated entirely by low-pressure OMVPE. The undercut portions were filled in a manner similar to mass transport process. The laser shows a threshold current of 48 mA at 300 K under CW operation.