A Boundary Element Approach to Field Analysis of Junction-Gate Field Effect Transistors

Yasuhiro TANAKA  Tatsuya SASAKI  Toshihisa HONMA  Ikuo KAJI  

IEICE TRANSACTIONS (1976-1990)   Vol.E69   No.2   pp.148-156
Publication Date: 1986/02/25
Online ISSN: 
Print ISSN: 0000-0000
Type of Manuscript: PAPER
Category: Semiconductors

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A new boundary integral formulation is presented in order to solve a general Laplace-Poisson's equation, which is one of the basic equations of semiconductor devices. As this formulation is based on Green's second identity or Gauss' divergence theorem, no conventional volume integral is needed, regardless of arbitrary distributions of space charge. The potentials and electric field intensities at interface nodes put between a Laplace and a Poisson domain are analytically calculated, because interface nodes are treated as same as internal points. It is effective and powerful to device analysis of such a junction-gate field effect transistor with interfaces movable according to operation bias conditions. On the basis of simple numerical experiments, the present method is applied to a simplified device models. It is shown that device analysis can be easily obtained for a more small discretized model. In consequence, numerical results also demonstrate the effectiveness of this approach.