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Mass Transported 1.55µm GaInAsP/InP BH Laser Grown by OMVPE
Masashi NAGASHIMA Yasuyuki MIYAMOTO Kazuhito FURUYA Yasuharu SUEMATSU Chiaki WATANABE Shu-ren YANG
IEICE TRANSACTIONS (1976-1990)
Publication Date: 1985/09/25
Print ISSN: 0000-0000
Type of Manuscript: LETTER
Category: Optical and Quantum Electronics
Full Text: PDF(231.8KB)
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Mass transport was first employed in an OMVPE system for 1.55 µm GaInAsP/InP laser. The wafers grown by OMVPE were treated at 700 under cracked PH3 and H2+N2 atmosphere for 1 hr, resulting in buried structure and the BH laser showed low threshold current of 50 mA (pulsed) without optimization.