Gain and Loss of GaInAsP/InP (λg1.5µm) Grown by OMVPE Estimated from Lasing Characteristics

Shu-ren YANG  Yasuyuki MIYAMOTO  Chiaki WATANABE  Masashi NAGASHIMA  Kazuhito FURUYA  Yasuharu SUEMATSU  

IEICE TRANSACTIONS (1976-1990)   Vol.E68    No.8    pp.521-523
Publication Date: 1985/08/25
Online ISSN: 
Print ISSN: 0000-0000
Type of Manuscript: LETTER
Category: Optical and Quantum Electronics

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Gain and loss coefficients were determined for GaInAsP/InP (λg1.5 µm) grown by OMVPE from lasing characteristics. Crystal quality of OMVPE GaInAsP/InP was found to be substantially the same as those grown be LPE. Absorption losses of the quaternary active and the binary InP layers were estimated separately.