The AES and XPS Studies on Interface Layers of Ta-Al-N Anodized Films

Katsutaka SASAKI  Toshiji UMEZAWA  

Publication
IEICE TRANSACTIONS (1976-1990)   Vol.E68   No.7   pp.407-408
Publication Date: 1985/07/25
Online ISSN: 
DOI: 
Print ISSN: 0000-0000
Type of Manuscript: LETTER
Category: Materials
Keyword: 


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Summary: 
Stoichiometries at interface layers of Ta-Al-N anodized films have been investigated. It is shown that the chemical states of interfaces are consisting of stoichiometric Ta2O5, Al2O3 and metals. Off stoichiometries at interfaces are discussed with respect to dissipation factors.