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The AES and XPS Studies on Interface Layers of Ta-Al-N Anodized Films
Katsutaka SASAKI Toshiji UMEZAWA
IEICE TRANSACTIONS (1976-1990)
Publication Date: 1985/07/25
Print ISSN: 0000-0000
Type of Manuscript: LETTER
Full Text: PDF(135.8KB)>>
Stoichiometries at interface layers of Ta-Al-N anodized films have been investigated. It is shown that the chemical states of interfaces are consisting of stoichiometric Ta2O5, Al2O3 and metals. Off stoichiometries at interfaces are discussed with respect to dissipation factors.